Analog/Mixed Signal

Four Gen-4 silicon-on-carbide discrete components introduced

02 December 2020

UnitedSiC has launched four discrete devices based on its fourth-generation silicon-on-carbide field-effect transistor (SIC FET) technology platform.

One of the recently released SIC FET devices. Source: UnitedSiCOne of the recently released SIC FET devices. Source: UnitedSiCThe 750 V SiC FETs are geared for power applications across the automotive, industrial charging, telecom rectifiers, datacenter PFC and DC-DC conversion as well as renewable energy and energy storage.

The devices are available in 18 and 60 mohm options and surpass existing competitive SiC MOSFET performance whether running cool or hot as well as offer the lowest integral diode VF with reverse recovery for low dead-time losses and increased efficiency, UnitedSiC said.

The company said the devices offer more headroom and reduced design constraints. The VDS rating also makes the FETs useful in 400/500 V bus voltage applications.

To contact the author of this article, email engineering360editors@globalspec.com


Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement
Find Free Electronics Datasheets
Advertisement