Power Semiconductors

APEC 2018: 650 V Silicon Carbide FETs Drop-in Replacements for Silicon Cut Losses in Power Systems

06 March 2018

The UJ3C series works with EVs chargers, power supplies, motor drives and more. Source: UnitedSiCThe UJ3C series works with EVs chargers, power supplies, motor drives and more. Source: UnitedSiCPower semiconductor vendor UnitedSiC has introduced drop-in replacements for silicon superjunction MOSFETS in the form of a new series of 650 V silicon carbide (SiC) FETs.

Announced at the 2018 Applied Power Electronics Conference (APEC), the components operate with standard Si-MOSFET gate drive, eliminating the need to redesign drive circuits while simultaneously offering low RDS(ON) and low gate charge to reduce system losses.

The devices are used for power factor correction and DC/DC conversion in both hard-switched and ZVS-switched systems for electric vehicle (EV) chargers, power supplies, motor drives and renewable energy inverter applications.

The UJ3C series features a maximum drain current rating from 31 amps to 85 amps with low RDS(ON) specified at 27 milli-ohms. Furthermore, the built-in low Qrr body diode eliminates the need for an anti-parallel diode. The devices are capable of switching frequencies up to 500 kHz allowing designers to reduce the size and cost of other system components such as bulky inductors, capacitors and thermal management parts.

The UJ3C series is available now priced at $7.69 in 1,000 unit quantities.

The 2018 APEC conference is taking place this week in San Antonio, Texas.

To contact the author of this article, email PBrown@globalspec.com

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