Looking to make it easier to drop silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) into legacy systems and to enable the next generation of power converter designs, NoMIS Power unveiled advancements in its 1.2 kV planar MOSFETs.
These advancements include reductions in on-resistance by optimizing device design and process steps.
The SiC MOSFETs achieve an on-resistance of 2.5 mΩ-cm2 at room temperature with a gate oxide thickness of 50 nm. With this, on-resistance plus a thicker gate oxide allows these commodity devices to support higher-frequency switching with lower input capacitance and reliability, the company said.
These devices allow for an up to 16% reduction in on-resistance compared to the previous generation that was fabricated using the same process technology. It also allows engineers to operate gate drivers at either +18 V or +20 V gate-to-source voltage (Vgs) with near-identical performance, NoMIS said.
The company claims this removes the need for gate driver redesigning existing applications allowing users to integrate the MOSFETs into legacy power platforms for these savings.
"These new planar SiC MOSFETs push us further ahead of the curve," said Seung Yup Jang, VP head of SiC Device Development at NoMIS Power. "We're not just improving benchmarks — we're removing barriers to SiC adoption by giving system designers more flexibility, better performance, and greater confidence."
NoMIS Power will showcase the devices at PCIM Europe 2025 taking place this week in Nuremberg, Germany.
