Industrial Electronics

Littelfuse Announces 1700 V, 1 Ohm, SiC MOSFET

25 September 2018

Littelfuse Inc. has introduced its first 1,700 V silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET), the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. The LSIC1MO170E1000 is a powerful addition to the company’s existing 1,200 V SiC MOSFETs and Schottky diodes. End-users will benefit Source: Littelfuse, Inc.Source: Littelfuse, Inc.from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications, including electric and hybrid vehicles, datacenters and auxiliary power supplies. When compared to similarly rated silicon IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system-level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements and potentially lower system level costs.

Additionally, the Littelfuse SiC MOSFETs deliver on-par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include:

  • Solar inverters
  • Switch-mode and uninterruptible power supplies
  • Motor drives
  • High-voltage DC/DC converters
  • Induction heating

“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” said Michael Ketterer, global product marketing manager, power semiconductors, semiconductor business unit at Littelfuse. “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance and junction capacitances.”

The new 1700 V, 1 Ohm, SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:

  • Optimized for high-frequency, high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching

LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.

Additional information is available on the LSIC1MO170E1000E SiC MOSFET product page.

To contact the author of this article, email engineering360editors@globalspec.com


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