Microelectronics standards developer JEDEC Solid State Technology Association has issued new documents that cover the reliability and testing of silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETS).
Procedures for the evaluation of reliability of gate oxide, including time-dependent dielectric breakdown testing and interpretation of results, are published in JEP194: Guideline for Gate Oxide Reliability and
Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs.
JEP195: Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion addresses the SiC MOSFET-specific phenomenon called gate switching instability and includes test and measurement routines to evaluate parametric drift and its effect on device performance.
A test method for gate charge of SiC MOSFETs that takes into account unique performance attributes of SiC MOSFETs is described in JEP192: Guidelines for Gate Charge (QG) Test Method for SiC MOSFET.
These publications were developed by JEDEC’s JC-70.2 Silicon Carbide Subcommittee and are available for free download from the JEDEC website.
