Semiconductors and Components

SiC MOSFETs for main drive inverters of electric vehicles

18 June 2020

Rohm has introduced its fourth generation 1,200 V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFETs) for automotive powertrain systems such as the main drive inverter.

The new silicon carbide power MOSFETs for electric vehicles. Source: RohmThe new silicon carbide power MOSFETs for electric vehicles. Source: RohmSilicon carbide power devices are capable of withstanding high voltages with low losses. The use of these electronic components in electric vehicles (EVs) has been accelerating with the development of smaller and more efficient electrical systems. Improving efficiency with the decreasing size of the main inverter plays a central role in the drive systems, requiring further advancements in power devices.

Rohm said its MOSFETs trade off the relationship between lower ON resistance and short-circuit withstand time by reducing ON resistance per unit area by 40% over conventional products while simultaneously not sacrificing withstand time. Additionally, the MOSFETs reduce the parasitic capacitance making it possible to achieve 50% lower switching loss over Rohm’s previous SiC MOSFET generation.

To contact the author of this article, email engineering360editors@globalspec.com


Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement
Find Free Electronics Datasheets
Advertisement