To help space-constrained power applications such as AC/DC power supplies, Qorvo has introduced a surface-mount TO-leadless (TOLL) package for its 5.4 milliohm (mΩ) 750 V silicon carbide (SiC) field-effect transistors (FETs).
The company made the announcement of the first products in the 750V SiC FETs with TOLL packages with on-resistance will range from 5.4 mΩ to 60 mΩ at the Applied Power Electronics Conference (APEC) 2023 trade show taking place this week in Orlando, Florida.
The applications will range from several hundreds of watts to multiple kilowatts as well as solid-state relays and circuit breakers up to 100 amps.
The TOLL package is 30% smaller in footprint and about half the height of comparable alternative D2PAK surface-mount offerings, Qorvo said. However, despite the size reduction, the DC current rating is 120 A up to case temperatures of 144° C with the pulsed current rating of 588 A up to 0.5 milliseconds.
Other features of the TOLL package SiC FETs include:
- 4 to 10 times lower on-resistance than competing Si MOSFETs.
- 100 to 150 volts higher than alternative technologies.
- Ultra-low on-resistance and transient thermal behavior.
- A Kelvin source connection for high-speed switching.
- Includes Qorvo’s cascode circuit configuration.
The Qorvo TOLL-packaged SiC FET is included in Qorvo’s FET-Jet free-to-use online calculator for instant evaluation of efficiency, component losses and junction temperature rise for parts in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies.
