Analog/Mixed Signal

Qorvo unveils 7 silicon carbide field effect transistors

27 July 2022
The 750V SiC FET is used for IT and server power supplies as well as battery charging and onboard chargers. Source: Qorvo

Qorvo has introduced seven 750 V silicon carbide (SiC) field effect transistors (FET) designed for onboard chargers, soft-switched DC/DC converters, battery charging and IT/server power supplies.

The semiconductors feature high-power and require maximum efficiency with low conduction in a thermally enhanced package. The Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44 and 60 milliohms, allowing engineers more options and flexibility while leveraging a cascode SiC FET technology.

Other features include:

  • Low thermal resistance
  • Heat extraction on standard printed circuit boards
  • Silver-sinter die attach
  • D2PAK-7L package

“The D2PAK-7L package reduces inductance from compact internal connection loops which ─ along with the included Kelvin source connection ─ results in low switching loss, enabling higher frequency operation and improved system power density,” said Anup Bhalla, chief engineer at UnitedSiC, now part of Qorvo.

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