Qorvo has introduced seven 750 V silicon carbide (SiC) field effect transistors (FET) designed for onboard chargers, soft-switched DC/DC converters, battery charging and IT/server power supplies.
The semiconductors feature high-power and require maximum efficiency with low conduction in a thermally enhanced package. The Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44 and 60 milliohms, allowing engineers more options and flexibility while leveraging a cascode SiC FET technology.
Other features include:
- Low thermal resistance
- Heat extraction on standard printed circuit boards
- Silver-sinter die attach
- D2PAK-7L package
“The D2PAK-7L package reduces inductance from compact internal connection loops which ─ along with the included Kelvin source connection ─ results in low switching loss, enabling higher frequency operation and improved system power density,” said Anup Bhalla, chief engineer at UnitedSiC, now part of Qorvo.