Analog/Mixed Signal

Qorvo unveils 7 silicon carbide field effect transistors

27 July 2022
The 750V SiC FET is used for IT and server power supplies as well as battery charging and onboard chargers. Source: Qorvo

Qorvo has introduced seven 750 V silicon carbide (SiC) field effect transistors (FET) designed for onboard chargers, soft-switched DC/DC converters, battery charging and IT/server power supplies.

The semiconductors feature high-power and require maximum efficiency with low conduction in a thermally enhanced package. The Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44 and 60 milliohms, allowing engineers more options and flexibility while leveraging a cascode SiC FET technology.

Other features include:

  • Low thermal resistance
  • Heat extraction on standard printed circuit boards
  • Silver-sinter die attach
  • D2PAK-7L package

“The D2PAK-7L package reduces inductance from compact internal connection loops which ─ along with the included Kelvin source connection ─ results in low switching loss, enabling higher frequency operation and improved system power density,” said Anup Bhalla, chief engineer at UnitedSiC, now part of Qorvo.

To contact the author of this article, email engineering360editors@globalspec.com


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