Transphorm Inc., a designer and manufacturer of high-voltage (HV) gallium nitride (GaN) semiconductors, 
Source: Transphorm Inc.has announced its first Gen III PQFN88 transistors. The new 650 V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab), and offer an on-resistance of 72 milliohms.
Launched in June 2018, Transphorm’s Gen III devices came onto the market as high-quality, high-reliability GaN field-effect transistors (FETs). They pair a custom-designed, low-voltage metal-oxide semiconductor FET with the GaN FET to offer:
- Quiet switching
- High performance at increased current levels with minimal external circuitry
- Increased noise immunity (threshold voltage at 4 V)
- Increased gate robustness (at +/-20 V)
The Gen III drain and source PQFN88 packages include wider pins for high board level reliability (BLR), which increases the reliability of multi-layer printed circuit board (PCB) designs. Offering the drain and source tab configurations also accommodates both high and low-side switch locations. This provides high radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface-mount applications using Transphorm’s latest technology.
The adoption rate of high-voltage GaN power electronics is on the rise. Transphorm has announced several customers with diverse end products that demonstrate the technology’s value.
Supporting design resources include:
- TP65H070L series datasheet
- TP65H070L series spice model
- 1.2 kW half-bridge buck or boost evaluation kit [TDHBG1200DC100-KIT]
- TP65H070L half-bridge daughter card [TDHB-65H070-DC]
- Recommended external circuitry for Transphorm GaN FETs app note
Additional app notes and design guides can be found on the device product pages: TP65H070LSG and TP65H070LDG.
