Samsung Electronics has introduced its first radio frequency (RF) technology based on its 8 nm process technology.
According to Samsung, the technology can provide a one-chip solution for 5G communications with support from multi-channel and multi-antenna chip designs. The RF platform will allow Samsung to expand its 5G semiconductors from sub-6 GHz to millimeter wave (mmWave).
The RFeFET architecture offers improvements in performance, power consumption and area. Compared to 14 nm RF technology, the RFeFET technology supplements the digital PPA scaling and restores the analog/RF scaling at the time for high-performance 5G platforms, Samsung said.
Additionally, the 8 nm RF process provides up to a 35% increase in power efficiency with a 35% decrease in RF chip area compared to older technologies, Samsung said.
“As 5G mmWave expands, Samsung’s 8 nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices,” said Hyung Jin Lee, master of the foundry technology development team at Samsung Electronics.
