Vishay Intertechnology, Inc. has introduced four new 40 V TrenchFET Gen IV standard-level n-channel power metal-oxide field-effect transistors (MOSFETs) in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.
Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with gate-drain charge/gate-source charge (Qgd/Qgs) ratios of less than 1. 
Source: Vishay Intertechnology, Inc.
The high minimum gate-source threshold voltage of the devices prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Qgd/Qgs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones and automation systems.
The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP and SIR5408DP are available with a range of typical on-resistance values from 0.9 mW to 2.5 mW at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100% RG- and UIS-tested, RoHS-compliant and halogen-free.
Device specification table:
Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.
