Samsung Electronics Co. Ltd. has completed all process technology development and has started wafer production of its 7 nanometer, low power plus (LPP) with extreme ultraviolet (EUV) lithography technology.
The commercialization of this process node gives customers of Samsung’s Foundry technology the ability to build a full range of emerging products for 5G, artificial intelligence, enterprise, hyperscale datacenter, the internet of things (IoT), automotive and networking, Samsung said.
The EUV technology uses 13.5 nm wavelength light to expose silicon wafers as opposed to conventional argon fluoride (ArF) immersion technologies that are able to achieve 193 wavelengths and multi-patterning mask sets. EUV creates the use of a single mask to develop a silicon wafer layer where ArF can require up to four masks for the same layer. Samsung said its 7LPP process reduces the total number of masks by about 20% compared to non-EUV processes.
The lithography technology also allows for increased performance, lower power and smaller area while improving design productivity, Samsung said. Compared to 10 nm FinFET technology, the 7LPP reduces the process complexity with fewer layers and better yields, but also delivers up to a 40% increase in area efficiency with 20% higher performance or up to 50% lower power consumption.
By 2020, Samsung expects to secure additional capacity with a new EUV line for high volume manufacturing of next-generation chip designs. Currently, Samsung is partnering with companies in the industry to provide foundation and advanced intellectual property (IP), advanced packaging and services to fully enable designs of the 7LPP manufacturing process.