Analog/Mixed Signal

Power GaN FET devices available for 5G, IoT and electric vehicles

22 September 2020

Newark is now shipping Nexperia’s power gallium nitride (GaN) FET range that delivers improved density and power usage in electric vehicles (EVs), 5G wireless communications, internet of things (IoT) and more.

Newark said the range of devices can help design needs as the world looks to legislation to help tackle pressing issues such as reducing CO2 emissions, accelerating efficient power conversion and increased electrification.

GaN technology has benefits that silicon and IGBTs do not such as more efficient power conversion and in EVs GaN technology directly reduces power losses that can impact the range of a vehicle. Efficiency in power conversion reduces the need for cooling systems to dissipate generated heat, reducing the vehicle’s weight and system complexity and offering a longer operating range or the same range with a smaller battery. Power GaN FETs could also be used in data centers, telecom infrastructures and industrial applications.

GaN FETs also deliver performance for applications such as hard switching for AC-DC Totem pole PFC applications, LLC phase shift full-bridge for soft-switching applications, all DC-AC inverter topologies and AC-AC matrix converters using bidirectional switches.

To contact the author of this article, email engineering360editors@globalspec.com


Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement
Find Free Electronics Datasheets
Advertisement