Newark is now shipping Nexperia’s power gallium nitride (GaN) FET range that delivers improved density and power usage in electric vehicles (EVs), 5G wireless communications, internet of things (IoT) and more.
Newark said the range of devices can help design needs as the world looks to legislation to help tackle pressing issues such as reducing CO2 emissions, accelerating efficient power conversion and increased electrification.
GaN technology has benefits that silicon and IGBTs do not such as more efficient power conversion and in EVs GaN technology directly reduces power losses that can impact the range of a vehicle. Efficiency in power conversion reduces the need for cooling systems to dissipate generated heat, reducing the vehicle’s weight and system complexity and offering a longer operating range or the same range with a smaller battery. Power GaN FETs could also be used in data centers, telecom infrastructures and industrial applications.
GaN FETs also deliver performance for applications such as hard switching for AC-DC Totem pole PFC applications, LLC phase shift full-bridge for soft-switching applications, all DC-AC inverter topologies and AC-AC matrix converters using bidirectional switches.