Industrial Electronics

Power Stage Delivers 25 Percent Lower Power Losses than Silicone-Based Designs

08 September 2017

Source: MouserSource: Mouser

Mouser Electronics, Inc., is now stocking the LMG5200 gallium nitride (GaN) power stage from Texas Instruments. The LMG5200 devices deliver 25 percent lower power losses compared to other silicon-based designs. This enables single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom and motor control applications.

The TI LMG5200 device is an 80 V, 10 A integrated GaN field-effect transistor (FET) power stage that consists of a high-frequency driver and two 15 milliohm GaN FETs in a half-bridge configuration. The device reduces electromagnetic interference (EMI) and increasing power-stage efficiency by minimizing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 device has advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz.

The LMG5200 device’s transistor-transistor logic (TTL)-compatible inputs can withstand input voltages up to 12 V. This allows the inputs to be directly connected to the outputs of an analog PWM controller with up to 12 V power supply. This eliminates the need for a buffer stage. The proprietary bootstrap voltage clamping technique ensures that the gate voltages of the enhancement mode GaN FETs are in safe operating range.

Along with the LMG5200, Mouser is stocking the LMG5200EVM-02 evaluation module. This module is designed to provide engineers with a complete working power stage with an external PWM signal. The board can be configured as a buck converter, boost converter or other converter topology using a half bridge. It can be used to evaluate performance of the LMG5200 as a hard-switched converter to sample measurements like efficiency, switching speed and voltage change over time (dV/dt).

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