Power Semiconductors

New wide bandgap silicon carbide MOSFETs for EVs and charging stations

12 March 2020

ON Semiconductor has expanded its range of wide bandgap devices with two families of silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) designed for electric vehicles (EVs), uninterruptible power supplies, server power supplies and EV charging stations.

The 1200 V and 900 V N-channel SiC MOSFETs deliver fast switching performance and reliability compared to silicon, ON said. An intrinsic diode with low reverse recovery charge for reduction in power losses, boosts operating frequencies and increases power density of the solution.

The SiC MOSFETs offer higher surge ratings, improved avalanche capability and improved short circuit robustness when compared to silicon devices. This delivers a longer lifetime, which is essential in demanding modern power applications, ON said. A lower forward voltage provides threshold-free on-state characteristics that reduce the static losses that occur when the device is conducting.

The SiC MOSFETs are Pb-free and Halide-free and intended for automotive applications. They are also AEC-Q100 qualified and PPAP capable. The 1200 V devices are rated at up to 103 A while the 900 V devices carry ratings as high as 118 A.

To contact the author of this article, email engineering360editors@globalspec.com

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