After producing silicon carbide (SIC)-based Schottky diodes and JFETs for more than a decade and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage MOSFETs. The German semiconductor supplier has developed a new 1200 V SiC MOSFET using a state-of-the-art trench process. With on-resistance (RDS(on)) of just 45 mΩ, the SiC MOSFET is fully compatible with the +15 V/-5 V voltages typically used to drive IGBTs. Plus it offers a benchmark threshold voltage rating (Vth) of 4 V with short-circuit robustness, and fully controllable dV/dT characteristics. According to Infineon, the key benefits of a SiC MOSFET over a silicon IGBT include temperature-independent switching losses and threshold voltage-free on-state characteristics.
In implementing the new SiC MOSFETs, Infineon has also readied 1200 V Easy1B half-bridge and booster modules. Combining PressFIT connections with a good thermal interface, low stray inductance and robust design, each module is available with RDS(ON) rating options of 11 mΩ and 23 mΩ.
Infineon will start sampling the 1200 V SiC MOSFETs in the second half of 2016, with volume production planned for 2017.