Aerospace

Active Bridge Solution Outperforms Diodes for PoE IoT Devices

26 July 2016

Fairchild Semiconductor has enhanced its GreenBridge™ active bridge quad-MOSFET technology with FDMQ8205, the first member of its next-generation GreenBridge series for applications that receive power via Power Over Ethernet (POE), such as security cameras, wireless access points, LED lighting and other powered devices. Designers can lower operating temperature, increase efficiency and reduce the solution size of their devices by taking advantage of the GreenBridge solution’s best-in-class Rdson performance, extremely small form factor and superior thermal performance.

GreenBridge™ active bridge quad MOSFET. Source: Fairchild GreenBridge™ active bridge quad MOSFET. Source: Fairchild

Advanced GreenBridge technology is compliant with the IEEE 802.3at standard and has up to 10 times lower power dissipation than Schottky diodes. This superior thermal performance allows designers to reduce or eliminate heat sinks to simplify their product design, decrease BOM costs and shrink PCB size. 

The extremely low conduction losses of the next-generation GreenBridge series are another important advantage as power and voltage must be maximized for the limited input power of POE systems. According to Fairchild, the GreenBridge series has best-in-class Rdson performance with 47% percent lower conduction losses compared to its closest competitor due to the power conversion efficiency of its optimized PowerTrench MOSFET technology.

The small size of GreenBridge devices also makes them ideal for new POE-based devices that need to be smaller than previous generations. At just 4.5 mm x 5 mm, the GreenBridge devices incorporate four MOSFETs in an MLP package connected in a full bridge. Further complementing their small size, the GreenBridge devices do not require an external driver, saving additional PCB space.



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