Power Semiconductors

Qorvo, Modelithics Expand GaN Model Partnership

19 May 2015

Modelithics Inc. and Qorvo plan to add more than 20 gallium nitride (GaN) RF non-linear simulation models for power transistors to their existing library.

Currently, the two companies offer 29 packaged and die transistor models for Qorvo customers. Under the expanded collaboration, additional Qorvo GaN transistor models will be developed and made available for free to approved Qorvo customers through the Modelithics website.

The GaN models feature temperature scaling, intrinsic I-V sensing capability, bias dependence, self-heat scaling factor parameter and measurement validations, including pulsed IV and load pull, the companies say. The models come with datasheets containing information about model development, features, parameter setting and performance plots.

Qorvo was formed out of the merger of Trident Microsystems and RF Micro Devices to proliferate RF power products, as well as emerging technologies such as GaN.

IHS Inc. projects that the market for both GaN and silicon carbide (SiC) power semiconductors will grow by a factor of 17 during the next 10 years as demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other establish applications increases. IHS predicts that revenue from sales of SiC and GaN power chips will rise to $2.5 billion by 2023, up from just $150 million in 2013.

Questions or comments on this story? Contact dylan.mcgrath@ihs.com

Related links:


IHS Power Semiconductors

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To contact the author of this article, email PBrown@globalspec.com

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