Qorvo has introduced a new asymmetric Doherty amplifier targeted at ultra-high levels of power efficiency in the design of wireless base station equipment.
The gallium nitride on silicon carbide (GaN-on-SiC) amplifier features two transistors in a single package for linearity, efficiency and gain as well as to reduce operating costs.
GaN devices have the ability to handle more power than other high-frequency technologies like GaAs and InP with better frequency performance characteristics, Qorvo says.
The QPD2731 device improves performance, linearity and efficiency with pre-matched, discrete GaN-on-SiC high electron mobility transistors (HEMTs) and provides an operating range of 2.5 to 2.7 GHz, Qorvo says.
The new amplifier is currently sampling.
