Analog/Mixed Signal

Asymmetric Doherty GaN-on-SiC Amplifier Improves Efficiency in Base Station Equipment

11 August 2017

Qorvo has introduced a new asymmetric Doherty amplifier targeted at ultra-high levels of power efficiency in the design of wireless base station equipment.

The gallium nitride on silicon carbide (GaN-on-SiC) amplifier features two transistors in a single package for linearity, efficiency and gain as well as to reduce operating costs.

GaN devices have the ability to handle more power than other high-frequency technologies like GaAs and InP with better frequency performance characteristics, Qorvo says.

The QPD2731 device improves performance, linearity and efficiency with pre-matched, discrete GaN-on-SiC high electron mobility transistors (HEMTs) and provides an operating range of 2.5 to 2.7 GHz, Qorvo says.

The new amplifier is currently sampling.

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