Mouser Electronics, Inc. is now stocking radiation-hardened low Earth orbit (LEO) A-Grade ICs from Apogee Semiconductor.
These ICs include logic devices, level translators, transceivers and more. The devices are fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, allowing high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si). These features make them ideal for small satellites and LEO constellations that require high performance, a small form factor and radiation resilience at a lower cost, as well as other applications where resistance to radiation is vital, such as
Source: Mouser Electronics, Inc. medical imagining. These devices are also suitable for aerospace, energy and other applications that involve harsh environments.
The Apogee Semiconductor AP54RHC288 radiation-hardened, dual-input arbiters, available from Mouser, protect critical applications by ensuring that only one output is high on each channel, regardless of the signal state at the inputs. This functionality is ideal for half-bridge drivers, thrusters, power supplies and applications where cross-conduction must be avoided. These arbiters include a triple-redundant design throughout the circuit, which allows the devices to be immune to single-event transients (SET).
The AP54RHC86 radiation-hardened, quad 2-input XOR gates feature built-in triple redundancy for enhanced reliability and logic-level down translation to VCC. Zero-power penalty cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC86 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.
The AP54RHC04 radiation-hardened hex inverter, available to order, features proprietary cold-sparing capability with zero static power penalty and built-in triple redundancy for improved reliability. This inverter includes an internal POR circuit that ensures correct operation at voltages as low as 1.65 V. The device provides logic-level down translation to VCC and supports class 2 ESD protection (4,00 0V HBM and 500 V CDM).
The AP54RHC164 radiation-hardened serial in parallel out (SIPO) shift registers include a proprietary output stage that allows for cold-sparing configurations as it avoids a leakage current penalty on inputs and outputs while in a power-down state. This feature results in considerable power savings in systems where multiple-path redundancy is employed.
