Mitsubishi Electric Corp. is developing electronic components and other embedded components in the same substrate.
The new technology can include power devices, passives, sensors and other materials that the company deployed in a 100 kW bidirectional DC-DC converter for a power converter rated at 136 kW/L, or about eight times more power dense than conventional converters.
The goal is to develop technology that can be used to contribute to the downsizing of power electronics equipment.
The substrate includes new integration technology that enables the parasitic inductance of the switching current loop to be reduced to less than one-tenth that of conventional converters. The resulting clean switching allows high-speed communication for high-operating frequencies in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs).
The embedded substrate allows for considerably smaller passive components such as reactors for current smoothing and capacitors, which take up considerable space in DC-DC converters.
