Microchip Technology Inc. has expanded its silicon carbide (SiC)-based power modules for use in a range of applications from electric vehicles (EVs) and charging stations to smart power grids, industrial and aircraft power systems.
The SiC family includes commercially qualified Schottky barrier diode (SBD)-based power modules in 700 V, 1200 V and 1700 V variants. The new power module family includes various topologies such as dual diode, full bridge, phase leg, dual common cathode and three-phase bridges. The SiC SBD modules simplify designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module, Microchip said.
Wide bandgap technology such as SiC offers a higher amount of reliability and ruggedness compared to silicon chips and help power systems with long application life with no degradation in performance, the company said.