Analog/Mixed Signal

Silicon carbide power modules for EVs, power grids and power systems

17 March 2020

Microchip Technology Inc. has expanded its silicon carbide (SiC)-based power modules for use in a range of applications from electric vehicles (EVs) and charging stations to smart power grids, industrial and aircraft power systems.

The SiC family includes commercially qualified Schottky barrier diode (SBD)-based power modules in 700 V, 1200 V and 1700 V variants. The new power module family includes various topologies such as dual diode, full bridge, phase leg, dual common cathode and three-phase bridges. The SiC SBD modules simplify designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module, Microchip said.

Wide bandgap technology such as SiC offers a higher amount of reliability and ruggedness compared to silicon chips and help power systems with long application life with no degradation in performance, the company said.

To contact the author of this article, email engineering360editors@globalspec.com


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