Microchip Technology Inc. has started production on a family of silicon carbide (SiC) power devices for the electric vehicles (EVs) market and other high-power applications.
The 700 V SiC MOSFETs and 700 V and 1,200 V SiC Schottky barrier diodes (SBDs) join an existing portfolio of SiC power modules. The SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests. The company claims the SBDs perform about 20% better than other SiC diodes in the unclamped inductive switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions.
Microchip said the products are suited for a range of power devices such as the growing market for EVs, including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions.