Integra Technologies, a leading designer and supplier of high-power RF power transistors and RF power modules, has released a new RF power amplifier module/pallet designed to solve various size, weight, power and cost challenges (SWaP-C) in high-performance L-band avionic systems.
Source: Integra Technologies
IGNP1011L2400 is a high-power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x [32 μs on, 18 μs off], 6.4% long-term duty cycle) or standard Mode S (128 μs, 2% duty cycle) pulse conditions. It supplies a minimum of 2200 W of peak output power -- with typically greater than 16 dB of gain and 57% efficiency -- and operates from a 50 V supply voltage. This RF power amplifier module/pallet is matched to 50 ohms at both input and output and is suitable for both 1030 and 1090 MHz.
For package dimensions, evaluation board details and complete test specifications, download the datasheet for IGNP1011L2400 at Integra Technologies. For application assistance, contact the Integra Technical Support team.
