Qorvo has introduced what it claims is the world’s highest power gallium-nitride on silicon carbide (GaN-on-SiC) RF transistor operating with 1.8W at 65 volts.
The QPD1025 extends the reach essential for L-band avionics and identification friend or foe (IFF) applications. Qorvo says the device offers a comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices. The high power and efficiency is accomplished without using exotic materials such as a diamond into the process flow for thermal management.
The company says the QPD1025 has better drain efficiency and beats LDMOS by nearly 15 percent in efficiency, which is important in IFF and avionics applications.
The RF transistor is currently sampling.