Qorvo®, a provider of innovative RF solutions, has introduced the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8KW at 65 volts, the QPD1025 delivers the outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.
The transistor offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. It is also expected to save customers time and money by eliminating the challenge of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.
Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. More information about the benefits of Qorvo’s GaN-on-SiC is available here, and in this video.
Engineering samples of the QPD1025 are available now.
