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Consumer Electronics

Super-junction MOSFET Handles Very High Breakdown Voltage

15 August 2016

Using its MDmesh K5 technology and innovative proprietary vertical structure, STMicroelectronics has readied a new 1500 V n-channel super-junction MOSFET with dramatic reduction in on-resistance and ultra-low gate charge. Plus, to prevent failure due to arcing, the very high breakdown voltage super-junction MOSFET is housed in a TO-220FP wide creepage package that provides increased surface insulation for the power MOSFET. According to the maker, the new package for the 1500 V STFH12N150K5 extends lead spacing to 4.25 mm, eliminating the special potting, lead forming, sleeving or sealing needed to prevent arcing when using conventional packages with 2.54 mm lead spacing. As a result, power supply manufacturers can now meet the applicable safety standards while minimizing field failures with simpler manufacturing processes, thereby enhancing productivity, says the supplier.

Besides providing superior arcing resistance, the TO-220FP wide creepage package also retains the superior electrical properties of the popular TO-220FP. Because the outer dimensions of the new package are similar to the existing TO-220FP, this simplifies the design-in while ensuring compliance with the established assembly processes. In fact, the TO-220FP wide creepage package was developed in collaboration with Korean customer SoluM, which is planning to use it for creating new power solutions that are more robust and cost-effective.

ST launches 1500 V super-junction MOSFET in TO-220FP wide creepage package. (Image Credit: STMicroelectronics). ST launches 1500 V super-junction MOSFET in TO-220FP wide creepage package. (Image Credit: STMicroelectronics).

Other key features of the 1500 V super-junction MOSFET include 1.9 Ω on-resistance (max), total gate charge of 47 nC at VGS = 10 V and ID = 7 A, 100% avalanche tested, best figure of merit and zener protection. Currently the manufacturer is ramping up production of TO-220FP wide creepage power transistors to support a major global television manufacturer. As per the product release, the 1500 V STFH12N150K5 and 1200 V STFH12N120K5 super-junction MOSFETs will be qualified by the end of the third quarter.

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