To provide higher efficiency and power density for telecom, industrial and computing applications, Vishay Intertechnology, Inc. has introduced its first fourth-generation 600 V E series power metal-oxide semiconductor field-effect transistor (MOSFET) in the new PowerPAK 8 x 8LR package.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27% and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60% while providing higher current in a smaller footprint than devices in the D²PAK package.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process,
Source: Vishay Intertechnology, Inc. from high voltage inputs to the low voltage outputs required to power the latest high-tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications will include servers, edge computing, super computers and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E's compact PowerPAK 8 x 8LR package features a 50.8% smaller footprint than the D²PAK while offering a 66% lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25° C/W. This allows for 46% higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the package's gullwing leads provide excellent temperature cycle capability.
Built on Vishay's latest energy-efficient E series superjunction technology, the SiHR080N60E features low typical on-resistance of 0.074 Ω at 10 V and ultra low gate charge down to 42 nC. The resulting FOM is an industry-low 3.1 Ω*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems greater than 2 kW. For improved switching performance in hard-switched topologies such as PFC, half-bridge and two-switch forward designs, the new MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package also provides a Kelvin connection for improved switching efficiency.
The device is RoHS-compliant and halogen-free, and it is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.
Samples and production quantities of the SiHR080N60E are available now.
