MACOM has launched the NPT2024 wideband transistor optimized for DC-2.7 GHz operation using MACOM’s Gallium Nitride on Silicon process. The NPT2024 supports CW, pulsed and linear operation, boasting output levels up to 200 W, and is currently sampling.
Featuring 50 V operation, 16 dB of gain and 60% drain efficiency at 1500 MHz, this 100% RF tested HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2024 is suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and UHF/L-band radar.
The transistor rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10% greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.