Micron Technology Inc. is going after the automotive memory market with the introduction of a low-power DDR4 DRAM and a high-speed, high temperature parallel NOR flash family.
The G18 NOR flash series offers a performance of 266 MB/sec for faster boot and code execution for high density applications and what Micron claims is three times faster throughput compared to quad SPI NOR devices. The NOR flash also has an industrial temperature range of -40 degrees Celsius (°C) to 85°C and an automotive-grade temperature range of -40°C to 105°C.
The low power DDR4 DRAM device family enables a 33%higher peak bandwidth than traditional DDR4 memory, Micron said. The DDR4 DRAM also features an automotive-grade industrial temperature range of -40°C to 95°C. Both products are expected to be available in 2016.
"With next-generation cars having self-driving functionality, semiconductors need to be designed for the automotive environment, which have more strict standards," said Luca De Ambroggi, principal analyst for Automotive Semiconductors at IHS. "Micron’s new family of products for the automotive market has been specified having this in mind, to enable next-generation cars."