Vishay Intertechnology Inc. has introduced the first device in a family of MOSFETs that deliver low conduction and switching losses at a lower voltage than previous higher voltage components.
Build on second-generation Super Junction technology, Vishay’s Siliconix SiHx25N50E MOSFET offers the same features at 500 V as its E series of 600 V and 650 V MOSFETs, Vishay claims. The low on-resistance and gate charge of the components will be key in saving energy in high-power, high-performance consumer products, lighting applications and ATX/silver box PC switch mode power suppliers (SMPS).
The new 25 amp MOSFET features an on-resistance of 145 milliohms and a gate charge of 57 nC, a similar benefit that can be found in the high voltage E series of MOSFETs. Much like Vishay’s other MOSFETS, these components are RoHS-compliant devices that are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 percent UIS testing.
The MOSFETs are available now for samples and production quantities, with lead times of 16 to 17 weeks.
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