Intel Foundry has completed the assembly of what it claims is the first commercial high numerical aperture (High NA) extreme ultraviolet (EUV) lithography scanner at its R&D site in Hillsboro, Oregon.
Intel already showed the tool traveling to the Oregon fab last month but now the company has shown what it took to get the tool into the facility as well as what it will do for the creation of advanced semiconductors. This includes being able to improve resolution and feature scaling for next-generation processors by changing the optics design for projecting printed images onto a silicon wafer, Intel said.
Intel said the installation of the High NA EUV tool will allow for advanced chip development including:
- Delivering advanced precision
- Scalability in chip manufacturing
- Develop innovative features
- Driving advancements in AI
- Driving advancements in emerging technology
When paired with Intel Foundry’s process technology and semiconductor manufacturing, Intel said the tool is expected to print features up to 1.7 times smaller than existing EUV tools. This will enable 2D feature scaling with 2.9 times more density.
Intel said this is a way to forward ever-smaller, ever-denser patterning — continuing Moore’s Law across semiconductors.
Compared to 0.33 NA EUV, High NA EUV, or 0.55 NA EUV, can deliver higher imaging contrast for similar features for less light per exposure, which reduces the time required to print each layer and increase wafer output.
Intel said it will use both forms of NA EUV lithography and other processes in developing and manufacturing advanced chips. Starting with product proof points on Intel 18 A in 2025 and continuing into its 14 A process technology.
