Semiconductor Equipment

Video: Intel receives ASML’s first High NA EUV system

22 March 2024

Intel Corp. had what it claims is the first Twinscan Exe:5200 High Numerical Aperture (High NA) Extreme Ultraviolet (EUV) system from ASML delivered to its Hillsboro, Oregon facility this month.

The delivery of the EUV equipment is the latest phase of the longstanding collaboration between the companies.

The EUV platform features a 0.55 numerical aperture and can produce more than 200 wafers per hour productivity. Intel said it will use the system to enable its roadmap of transistor innovations and will continue Intel’s path to produce semiconductors with High-NA EUV beginning in 2025.

The 0.55 numerical aperture is an increase from previous EUV machines with a 0.33 numerical aperture lens. This along with the combined wavelength used determines the smallest printable feature, Intel said.

In the video, the platform arrives via aircraft and is unloaded onto a semi-trailer. The trailer then transports the EUV system to the Hillsboro facility where it is then installed.

According to ASML, the Exe platform enables geometric chip scaling into the next decade and will support high volume manufacturing of semiconductors in the 2025-to-2026-time frame. This includes advanced nodes like 2 nanometer logic nodes and later memory nodes at similar density.

According to ASML, the system helps chipmakers:

  • Reduce the number of process steps
  • Reduce defects
  • Reduce costs
  • Reduce cycle time
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