SK Hynix said it has begun mass production of its 238-layer 4D NAND flash memory and has started compatibility testing with global smartphone vendors.
The 238-layer flash has a 34% higher manufacturing efficiency compared to SK Hynix’s previous generation of 176-layer memory. This results in a significant improvement in cost competitiveness, SK Hynix said.
Other performance improvements include a data-transfer speed of 2.4 Gb per second. This is a 50% increase from the previous flash memory generation and about a 20% increase in read and write speed.
The company said it has supplied a global smartphone vendor with the 238-layer flash memory and once completed, SK Hynix will be supplying the flash memory for new smartphone generations and other technologies such as PCIe 5.0 solid state drives (SSDs) and high-capacity server SSDs.
