MEMS and Sensors

SK Hynix begins sampling 238-layer 4D NAND flash

09 August 2022
The sample of SK Hynix’s 238-layer 4D NAND flash memory which will initially be used in client and enterprise SSDs. Source: SK Hynix

SK Hynix has started sampling its 238-layer 512 Gb triple level cell (TLC) 4D NAND flash memory chips.

The rollout follows the development of a 176-layer NAND product two years ago and SK Hynix calls the development of the 238-layer flash the most layers and smallest cell area at the same time.

The goal is to introduce products that outperform existing ubiquitous 3D products and 4D products have a smaller cell area per unit compared to 3D, which leads to higher production efficiency.

Other features of the 238-layer NAND flash include:

  • Data transfer speed of 2.4 Gb/s, a 50% increase from the previous generation.
  • Energy consumption on data reading decreased by 21%.
  • 34% increase in chip density per unit area.

SK Hynix said the NAND flash will likely be adopted for client and enterprise-based solid state drives (SSDs) before being used for smart devices such as mobile handsets and then other SSDs for consumer use.

The company plans to introduce a 238-layer in 1 terabit capacity in the next year, which is doubling the density compared to 512 Gb products.

To contact the author of this article, email engineering360editors@globalspec.com


Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement
Find Free Electronics Datasheets
Advertisement