To meet the increasing demand for higher-density complementary metal-oxide-semiconductor (CMOS) double data rate 4 (DDR4) synchronous dynamic random-access memory (SDRAM), Alliance Memory has expanded its portfolio with two new 8 Gb devices. Delivering improved performance over previous-generation DDR3 SDRAMs, the AS4C1G8D4 and AS4C512M16D4 offer lower power consumption and faster data transfer rates in 78-ball and 96-ball fine pitch ball grid array packages, respectively.
Compared with DDR3 SDRAMs, the new devices reduce operating voltages from 1.65 V to 1.2 V (±0.06 V) to increase battery life in portable electronics such as smartphones and tablets. For increased efficiency and performance in 5G designs, desktop computers and servers, the 1 Gb x 8-bit AS4C1G8D4 and 512 M x 16-bit AS4C512M16D4 offer up to 16 memory banks and deliver faster clock speeds of 1333 MHz for extremely high 
Source: Alliance Memorytransfer rates to 2666 Mbps/pin.
With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0° C to 95° C) and industrial (-40° C to 95° C) temperature ranges, the devices are ideal for the industrial, networking, internet of things, automotive, gaming and consumer markets.
The AS4C1G8D4 and AS4C512M16D4 support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead- and halogen-free.
Samples and production quantities of the new 8 Gb DDR4 SDRAMs are available now, with lead times of eight to 10 weeks. Pricing for U.S. delivery starts $8 per piece.
