Alliance Memory has expanded its offering of high-speed complementary metal-oxide-semiconductor mobile low-power synchronous dynamic random-access memory (SDRAMs) with four new low-power double data rate (LPDDR)4X devices in a variety of densities. Offering an extension to the company's fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver ~50% lower power ratings in the 200-ball fine-pitch ball grid array (FBGA) package for higher power efficiency.
With low-voltage operation of 0.6 V — compared to 1.1 V for LPDDR4 SDRAMs — these devices increase battery life in portable electronics for the consumer, commercial and industrial markets, including smartphones, smart speakers, security surveillance systems and other internet of things (IoT) devices utilizing artificial intelligence (AI) and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs deliver fast clock speeds up to 1.86GHz for extremely high transfer rates of 3.7Gbps.
For automotive applications — including advanced driver-assistance systems — the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40° C to +105° C and on-chip error correction codes for increased reliability. The AS4C512M16MD4V-053BIN and AS4C512M32MD4V-053BIN operate over an industrial temperature range of -40° C to 85° C.
The AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN are organized as single-channel devices — each consisting of eight banks of 16 bits — while the AS4C512M32MD4V-053BIN offers two channels. All four components provide fully synchronous operation; programmable read and write burst lengths of 16, 32 and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate.
Alliance Memory's LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification.