Alliance Memory has expanded its offering of high-speed complementary metal-oxide semiconductor (CMOS) mobile low-power synchronous dynamic random-access memory (SDRAM) with new 16 Gb and 32 Gb LPDDR4X devices that combine low power ratings with increased clock speeds and data rates in the 200-ball field programmable gate array (FBGA) package.
With low-voltage operation of 0.6 V, the 16 Gb AS4C512M32MD4V-046BIN and 32 Gb AS4C1G32MD4V-046BIN deliver higher power efficiency for increased battery life in portable electronics for the consumer,
Source: Alliance Memory commercial and industrial markets, including smartphones, smart speakers, security surveillance systems, and other internet of things devices utilizing artificial intelligence and 5G technologies.
Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs deliver high clock frequencies of 2.133 GHz for extremely high data rates of 4.2 Gbps. Offering a 32-bit bus width, the devices operate over an industrial temperature range of -40° C to 95° C.
The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN are organized as two channels per device, with individual channels consisting of eight banks of 16 bits. The components provide fully synchronous operation; programmable read and write burst lengths of 16, 32 and on the fly; and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate.
Alliance Memory's LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification.
Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.
