Alliance Memory will exhibit at Embedded World 2024 in Nuremberg, Germany, showcasing the latest LPDDR4x, eMMC, Flash, SDRAM and lower power SRAM solutions.
Visit hall 3A, stand 215, during April 9 through April 11 to learn more about these products.
New products
New 16 Gb and 32 Gb LPDDR4X SDRAMs
With low-voltage operation of 0.6 V, new 16 Gb AS4C512M32MD4V-046BIN and 32 Gb AS4C1G32MD4V-046BIN in the 200-ball fine-pitch ball grid array (FBGA) package increase battery life in portable electronics for the consumer, commercial and industrial markets, including smartphones, smart speakers, security surveillance systems and other internet of things (IoT) devices utilizing artificial intelligence (AI) and 5G
technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs are offered in 32-bit bus width operating at high clock frequencies of 2.133 GHz with extremely high data rates of 4.2 Gbps.
Highlighted products
4 GB to 128 GB eMMC solutions
The company has extended their offering of eMMCs to include densities from 4 GB all the way up to 128 GB, providing you with a wide range of options to meet solid-state storage needs in consumer, industrial and networking applications. The devices integrate MLC NAND (4 GB to 16 GB) and TLC NAND (32 GB to 128 GB) flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.
1.8 V, 128 Mb multiple I/O serial NOR flash memory solutions
Offering enhanced performance — including fast read performance up to 133 MHz; fast program and erase times down to 0.3 ms and 60 ms typical, respectively; and active read current as low as 5 mA — and operating over a single 1.65 V to 1.95 V power supply, our new AS25F series 1.8 V, 128 Mb multiple input/output serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, IoT and mobile markets.
1.8 V and 3 V SPI NAND flash memory solutions
With densities from 1 Gb to 8 Gb and high-speed clock frequencies up to 120 MHz, the AS5F series of 1.8 V and 3 V devices meet the growing demand for SPI NAND flash memory products in the automotive, industrial, communications and consumer electronics markets.
New 16 Gb DDR4 SDRAM
The company has expanded its portfolio of complementary metal-oxide semiconductor (CMO)S DDR4 SDRAMs with a new 16 Gb device in the 96-ball FBGA package. The new AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.
New LPSRAMs
New low power asynchronous 1 Mb and 4 Mb SRAM (LPSRAM) products with feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER).
