Memory and Storage

Samsung to expand NAND flash facility

02 June 2020

Samsung Electronics plans to expand its NAND flash production capacity in its Pyeongtaek, Korea, facility to meet data center and mobile demands.

Construction on the facility has already begun and will pave the way for mass production of V-NAND memory in the second half of 2021.

The added capacity will play a major role in helping address mid- to long-term demands for NAND flash memory from the internet of things (IoT), artificial intelligence and 5G networks.

Samsung is making an effort to expand its facilities in order to meet these demands and previously announced that it would also build an additional line at the Pyeongtaek facility that will be focused on extreme ultraviolet (EUV)-based 5 nm and below process technology.

The production line would also be focused on applications such as 5G, high performance computing and AI.

EUV uses 13.5 nm wavelength light to expose silicon wafers as opposed to conventional argon fluoride (ArF) immersion technologies that are only able to achieve 193 nm wavelengths and require expensive multi-patterning mask sets.

Electronic device design manufacturing is expanding quickly despite a slow down of the global economy due to COVID-19. Just recently, Taiwan Semiconductor Manufacturing Co (TSMC) revealed it plans to build a 5 nm, 20,000 semiconductor wafer-per-month facility in Arizona.

To contact the author of this article, email PBrown@globalspec.com


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