Power Semiconductors

MaxLinear and Cree partner for GaN on SiC 5G power amplifiers

25 June 2021

MaxLinear and Cree are collaborating on a new 5G base station solution combining ultra-wideband linearization and gallium nitride (GaN) on silicon carbide (SiC) mid-band power amplifiers.

GaN on SiC used in 5G will help significant power, thermal and cost savings through more efficient wireless transmission, the companies said. The power savings from the GaN on SiC power amplifiers with a linearization solution can save power in the hundreds of watts for the massive MIMO radios that 5G needs.

The solution delivers linearization performance for a 280 MHz channel to support U.S. 5G spectrum (3.7 to 3.98 GHz). At 280 MHz, the Cree WS1A3940 power amplifier has a ~50% efficiency for the average output power of 39.5 dBm, providing a sampling rate of 983 MSPS and improves linearity by greater than 20 dB to exceed 3rd generation partnership project (3GPP) and the FCC’s requirements.

To contact the author of this article, email engineering360editors@globalspec.com


Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement
Find Free Electronics Datasheets
Advertisement