Aerospace

N-Channel MOSFET Has Low On-Resistance

10 October 2016

AOC3860 N-channel MOSFET. Source: Alpha and Omega Semiconductor. AOC3860 N-channel MOSFET. Source: Alpha and Omega Semiconductor.
Alpha and Omega Semiconductor Ltd. (AOS) has released the AOC3860, a common-drain 12 V dual n-channel MOSFET with reportedly the lowest on-resistance in the AlphaDFN™ product family of 2.15 Ω to achieve faster battery charge with a higher charging current.

The demand for faster charge comes from both the higher capacity of the battery pack and heavy use of the smart phone with data ranging from email and web browsing, to video streaming. The market is seeing charging power increase from the traditional 5 W to larger wattages of 15 W or 25 W, by raising either output voltage or output current. For battery packs, this always translates to a higher charging current. A MOSFET is a critical part of the battery charging circuit, which needs to provide reliable protection with minimum power loss and temperature rise.

The AOC3860 exhibits a typical Rss of 2.15 mΩ with 4.5 V gate voltage, and 2.25 mΩ with 3.8 V gate voltage. The chip size is further reduced to a 3.05 x 1.77 mm.

List price for the AOC3860 is $0.60 each in 1,000-piece quantities. It is available in production quantities with a lead time of 12 to 14 weeks.



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