Vishay Intertechnology Inc. has introduced a new 60 V, TrenchFET Gen IV, n-channel power, metal-oxide semiconductor field-effect transistor (MOSFET) for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm x 3.3 mm PowerPAK 1212-8S package.
Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low gate charge of 22.5 nC along with low output charge (QOSS).
Unlike logic-level 60 V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6 V, where the device provides optimized dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications. The SiSS22DN’s on-resistance is 4.8% lower than the next-best product, while its QOSS of 34.2 nC results in the best-in-class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero voltage switching (ZVS) or switch-tank topology. To achieve higher power density, the device utilizes 65% less PCB space than similar solutions in 6 mm x 5 mm packages.
The SiSS22DN minimizes conduction and switching losses simultaneously. The result is increased efficiency that can be realized in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies; primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules. The MOSFET is 100% RG- and UIS-tested, RoHS-compliant and halogen-free.