Alpha and Omega Semiconductor Limited, a designer, developer and supplier of power semiconductors and power ICs, has unveiled the new 1,200 V silicon carbide (SiC) αSiC metal–oxide semiconductor field-effect transistor (MOSFET) technology platform. Specifically targeting the industrial and automotive market, this next-generation technology will enable customers to achieve higher levels of efficiency and power density compared to existing silicon solutions.
Optimized for minimizing both AC and DC power losses through a low gate resistance design combined with the low increase in on-resistance over temperature, the αSiC technology can achieve the highest efficiencies across a wide range of application switching frequencies and temperatures. This higher efficiency can result in significantly reduced system costs and total bill-of-materials for the many industrial uses, including solar 
Source: Alpha and Omega Semiconductor Limited inverters, UPS systems, and EV inverter and charging systems.
The first product release for this new platform is the AOK065V120X2, a 1,200 V 65 mΩ SiC MOSFET available in a TO-2473L package. For ease of use, the AOK065V120X2 is designed to be driven with a -5 V / +15 V gate drive, allowing the broadest compatibility with existing high voltage IGBT and SiC gate drivers. Operation with a unipolar drive is also possible with optimized system design. Additional benefits of the αSiC platform include robust UIS capability, enhanced short circuit performance, and a high maximum operating temperature of 175° C.
The αSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options with full AEC-Q101 qualification. As part of the first wave release, the AOK065V120X2 is immediately available for production quantities.
