650 V Fast Body Diode MOSFETs Increase Voltage Headroom for Soft Switching

Vishay Intertechnology, Inc. has expanded its portfolio of fast body diode n-channel power MOSFETs with the 650 V EF Series devices. The Vishay Siliconix SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF provide additional voltage headroom for industrial, telecom and renewable energy applications when desired.

650 V EF Series fast body diode MOSFETS. Source: Vishay Siliconix.

Built on E Series superjunction technology, the 650 V fast body diode MOSFETs provide a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters and 3-level inverters.

The 21 A SiHx21N65EF is offered in five packages, while the 28 A SiHx28N65EF and 33 A SiHG33N65EF are each available in two. The devices feature low on-resistance down to 157 mΩ, 102 mΩ, and 95 mΩ respectively, and ultra-low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external electric vehicle (EV) charging stations, and LED, high-intensity discharge (HID), and fluorescent ballast lighting.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

Samples and production quantities of the 650 V EF Series MOSFETs are available now, with lead times of 16 to 18 weeks for large orders.