Power Semiconductors

Infineon Rolls Out First GaN RF Power Transistors

09 September 2015

Infineon Technologies AG has introduced its first RF power transistors manufactured on gallium nitride (GaN) on silicon carbide (SiC) technology.

Expanding its GaN-based portfolio, the devices are targeted at mobile base station manufacturers looking to build smaller and more flexible transmitters. Infineon says the GaN RF power transistors offer a higher efficiency, better power density and more bandwidth than traditional RF power transmitters used in cellular networks. These devices also offer a path to transition to 5G technology by allowing higher data volumes, the Munich, Germany-based company says.

The new RF power transistors leverage the performance of GaN technology to achieve 10% higher efficiency and five times the power density of the LDMOS transistors commonly used today., The GaN transistors allow for a smaller footprint and power requirements for the power amplifiers of base station transmitters. Future GaN on SiC devices will support for 5G bandwidth up to the 6 GHz frequency range, says the company.

Gerhard Wolf, vice president and general managerof Infineon’s RF power product line, says in a statement with the transition to wide bandgap semiconductor technology “we are setting the pace for the continued evolution of the cellular infrastructure.”

Questions or comments on this story? Contact engineering360editors@ihs.com

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