Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.
Designed for industrial use, the CoolGaN G5 transistor is designed to increase the performance of power systems by reducing undesired dead-time losses. This aims to increase overall system efficiency as well as power stage design and reduce bill of materials, Infineon said.
GaN technologies often incur higher power losses due to the larger effective body diode voltage in GaN-based devices. Until now, engineers required an external Schottky diode in parallel with the GaN transistor to reduce dead-times via a controller. However, this results in extra work, time and cost.
The CoolGaN G5 transistors reduce the need for an external device due to the integrated Schottky diode. This could be used for industrial use cases like:
- Server and telecom IBCs
- DC-DC converters
- Synchronous rectifiers for USB-C battery chargers
- High power PSUs
- Motor drives
