MEMS and Sensors

MagnaChip Offering 0.18 Micro SOI RF CMOS Process Technology

01 December 2014

South Korean chipmaker MagnaChip Semiconductor Corp. has joined the ranks of suppliers that offer 0.18 micron silicon on insulator (SOI) RF CMOS technology.

The SOI RF process technology is targeted for use in emerging RF front-end module (FEM) devices specifically antenna switching and tuner applications. According to MagnaChip, CMOS-based FEMs reduce time to market as well as the cost of manufacturing while offering similar performance to multiband and multimode smartphones and tablets.

The process technology uses thin-film silicon SOI with a 2.5V switch FET and contains 30 percent less number of mask layers compared to other competitive technologies, the company said.

Namkyu Park, executive VP of MagnaChip’s Semiconductor Manufacturing Services Division, said in a statement the SOI RF process technology is an “important addition” to the company’s portfolio of advanced and high performance process technologies. Park added that the company plans to continue to expand differentiated technologies in order to “meet the rapidly changing needs of our customers.”

MagnaChip is partnering with EEsof EDA at Keysight Technologies to offer up a RF CMOS model extraction, generation and verification technologies.

Related links:

IHS Semiconductor Manufacturing

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