Cree Inc. has introduced what it calls the industry’s first all silicon carbide (SiC) 1.7kV power module targeted at replacing silicon-based insulated-gate bipolar transistor (IGBT) modules in industrial applications.
The half-bridge module, powered by Cree’s C2M large area SiC chip technology, has an on-resistance of 8 milliohms and 10 times higher switching efficiency than standard silicon based components. Cree said the device allows engineers to reduce the size and cost of magnetic and cooling elements in a design while improving system efficiency and reliability, something that can't be done using an IGBT.
Figure 1
Cree’s 1.7kV power module
Cree said the power module will lower production costs and the development of smaller, lighter products with lower overall total cost of ownership in such applications as motor drive, grid-tie and utility scale solar inverter applications. Cree said the power module allows for a simplified system design and low-mean time to repair for high overall system availability.
Devin Dilley, director of medium voltage R&D at Vacon, a supplier of AC drives, said in a statement the Cree power module in motor drives “will enable a reduction in the side and cost of filter components by up to 40 percent while simultaneously increasing system efficiency.”
The half-bridge module is available from distributors Mouse, Digi-Key and Richardson RFPD/Arrow RF & Power.
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