ON Semiconductor has partnered with Transphorm to co-develop and co-market gallium nitride (GaN)-based power components targeted at the industrial, computing, telecom and networking markets.
The strategic partnership will combine Transphorm’s 600 volt GaN on silicon transistors with ON’s energy efficient power offerings such as power discretes, AC/DC controllers and integrated switches for custom application specific integrated circuit (ASIC) power management offerings.
GaN-based chips have been shown to deliver significant performance advantages compared to silicon based devices for power chips, ON said. The products in this agreement will allow designers to reach new levels of efficiency and power density in components, the company said. The first of the products based on the 600 V GaN technology are expected to be available for sampling before the end of 2014. The products will be used in the 200 W to 1000 W power range for compact power supplies and adapters for the telecom and server markets.
The first product under the partnership will be a co-developed packaged transistor product that will include low voltage MOSFET silicon from On for the cascoded switch and a high voltage high electron mobility transistor (HEMT) from Transphorm manufactured by ON.
Bill Hall, executive vice president and general manager of ON Semiconductor’s Standard Products Group, said in a statement that the company recognizes the benefits that GaN technology can bring to the power electronics market and hopes the agreement with Transphrom “can bolster customer confidence in this new technology and accelerate broad market adoption.”